The direct simulation model is the only model capable of correctly simulating both the escape process as well as the elastic reflection coefficient. Therefore its use is obligatory in the simulation of Auger electrons as well as in backscattering spectroscopy in cases where the near elastic peak area of the spectrum is of interest. Furthermore its application is recommended for the simulation of transmission electron microscopy using thin samples. Simulation of electron energy loss spectroscopy (TEE) is only possible in the direct simulation model.